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Beilstein J. Nanotechnol. 2019, 10, 211–221, doi:10.3762/bjnano.10.19
Figure 1: Sample A (SiO2+Ge, 33 mJ/pulse); a) SEM image of an agglomerate/aggregate of nanoparticles, inset z...
Figure 2: Sample A (SiO2+Ge, 33 mJ/pulse); a) SEM image of the zone indicated as square 2 in Figure 1a; b) CL panchrom...
Figure 3: Sample A (SiO2+Ge, 33 mJ/pulse); a) TEM image of the region labeled 1 in Figure 1a; b) details of the red sq...
Figure 4: Sample B (SiO2+Ge, 165 mJ/pulse); a) SEM image of an aggregate/agglomerate of nanoparticles, inset ...
Figure 5: Sample B (SiO2+Ge, 165 mJ/pulse); a) TEM image of the same agglomerate/aggregate of nanoparticles o...
Figure 6: SEM image of an aggregate/agglomerate of sample C (SiO2 400 mJ/pulse); b) details from panel a.
Beilstein J. Nanotechnol. 2017, 8, 418–424, doi:10.3762/bjnano.8.44
Figure 1: (a) AFM morphology image and (b) micro-Raman spectra of the as transferred graphene on SiO2 substra...
Figure 2: (Top) Comparison of the in situ Raman spectra of a Gr sample as transferred and subsequently treate...
Figure 3: (Top) Comparison of the in situ Raman spectra of a Gr sample as transferred and subsequently treate...
Figure 4: Correlation map of the 2D and G peak positions measured at room temperature in the Gr/SiO2/Si sampl...
Figure 5: In situ Raman spectra of MoS2 before thermal treatments (bottom), after thermal treatment in O2 at ...
Figure 6: MoS2 flake after the thermal treatment up to 430 °C in O2; optical microscopy (left) and AFM (right...
Figure 7: Ex situ Raman spectra of MoS2 before thermal treatment (bottom line), after thermal treatment in O2...
Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28
Figure 1: (a) Schematic including an optical image of a MoS2 transistor with the SiO2/Si backgate and Ni/Au s...
Figure 2: Semilog scale plot (a) and linear scale plot (b) of the transfer characteristics (ID−VG) measured a...
Figure 3: (a) Semilog scale plot of the transfer characteristics (ID−VG) in the subthreshold regime at differ...
Figure 4: (a) Linear scale plot of ID (left axis) and of the transconductance gm (right axis) at VDS = 0.1 V ...
Figure 5: (a) Temperature dependence of the field effect mobility extracted from the linear region of the ID−V...
Figure 6: Output characteristics ID−VDS for different gate bias values from −56 to 0 V at different temperatu...
Figure 7: (a) On-resistance Ron vs 1/(VG−Vth,lin) at different temperatures. (b) Temperature dependence of RC....
Figure 8: (a) Output characteristics (ID−VDS) for different gate bias values from −56 to 0 V at T = 298 K. (b...